Ultra-Low On-Resistance Measurements of SiC MOSFETs
应用文章
Silicon Carbide (SiC) power semiconductor devices have attracted attention due to their exceptional energy efficiency, especially in automotive applications. These SiC devices exhibit extremely low on-resistance values (in milliohms or micro-ohms), which traditional Curve Tracers cannot accurately measure due to poor measurement resolution/accuracy. This application note shows precise techniques/hints for measuring ultra-low Rds-on using the Keysight B1505A Power Device Analyzer/Curve Tracer.