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Foundry Partners - WIN Semiconductors
WIN Semiconductors Overview Video on YouTube — Scott Gatley, Associate Vice President of Marketing and Sales at WIN Semiconductors, describes what WIN Semiconductors provides for mutual customers of Keysight EEsof EDA and WIN Semiconductors.
WIN Semiconductors Corp. founded in October 1999, was the first pure-play 6-inch GaAs foundry in the world, has established two advanced GaAs wafer fabs in recognition of the growing demand for low cost manufacturing of high speed and high quality GaAs MMIC's (monolithic microwave ICs) and RFIC's (radio frequency ICs). WIN provides dedicated foundry services to design houses as well as IDM partners. WIN supplies HBT and pHEMT MMIC fabrication services to worldwide IC manufacturers, using state-of-the-art GaAs process technology.
PDKs are distributed by WIN and are available for immediate use with the Keysight ADS software.
| Process Name | Process Description | Latest ADS Version Supported | Front/Back PDK | EM Substrate | MMIC Tool Bar | DRC | LVS | ADS-WebDRC Link | Electro-Thermal |
|---|---|---|---|---|---|---|---|---|---|
| PIH0-03 | Power GaAs pHEMT with Integrated Vertical PIN and Schottky Barrier Diode MMIC Technology | 2021 | F/B | Y | Y | By Request | By Request | Y | N |
| PIH1-10 | Power GaAs pHEMT with Integrated Vertical PIN and Schottky Barrier Diode MMIC Technology | 2024 | F/B | Y | Y | By Request | By Request | Y |
N |
| NP12-01 | 0.12µm GaN/SiC HEMT Power Device | 2024 | F/B | Y | Y | By Request | By Request | Y | Y |
| NP15-00 | 0.15µm 20V Operation GaN HEMT | 2024 | F/B | Y | Y | By Request | By Request | Y |
Y |
| NP25-0X | 0.25µm 28V Operation GaN HEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | Y |
| NP25-20 | 0.25µm 40V Operation GaN HEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | Y |
| NP25-11 | 0.25µm 28V Operation GaN HEMT | 2024 | F/B | Y | Y | By Request | By Request | Y | Y |
| NP45-X1 | 0.45µm 50V Operation GaN HEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | Y |
| H01U-G3 | Integrated HBT and Hyperabrupt Varactor Diode | 2023 | F/B | Y | Y | By Request | By Request |
Y | By Request |
| HBT4 | 4th Generation HBT for GSM/3G/4G/WiFi | 2022 | F/B | Y | Y | By Request | By Request | Y | By Request |
| HBT5 | 5th Generation HBT for GSM/3G/4G/WiFi Sub-6GHz/HPUE | 2023 | F/B | Y | Y | By Request | By Request | Y | By Request |
| HBT7 | 5th Generation HBT for GSM/3G/4G/WiFi Sub-7GHz/HPUE | 2023 | F/B | Y | Y | By Request | By Request | Y | By Request |
| H02U-LC | High efficiency, High linearity and cost competitive HBT | 2022 | F/B | Y | Y | By Request | By Request | Y | By Request |
| H02U-VC | High ruggedness, High efficiency, High linearity and High cost-performance ration HBT | 2024 | F/B | Y | Y | By Request | By Request | Y | By Request |
| PH50-XX | Beta 75 HBT4 + lower Ron pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y |
N |
| PD50-XX | 0.5µm E/D pHEMT | 2024 | F/B | Y | Y | By Request | By Request | Y |
N |
| PD25-0X | 0.25/0.5µm E/D pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | N |
| PD25-22 | 0.25/0.5µm E/D pHEMT | 2023 | F/B |
Y | Y | By Request | By Request | Y | N |
| PP25-1X | 0.25µm 6V Operation pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y |
N |
| PP25-2X | 0.25µm 8V Operation pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y |
N |
| PP50-12 | 0.5µm Power pHEMT with Via1 and Ion Implant | 2018 | F/B | Y | Y | By Request | By Request | Y | N |
| PL15-1X | 0.15µm 4V Operation pHEMT, Low Noise | 2021 | F/B | Y | Y | By Request | By Request | Y | N |
| PP15-5X | 0.15µm 6V Operation pHEMT | 2021 | F/B | Y | Y | By Request | By Request | Y | N |
| PP15-60 | 0.15µm 6V Operation pHEMT | 2022 | F/B | Y | Y | By Request | By Request | Y | N |
| PP15-61 | 0.15µm 6V Operation pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | N |
| PE15-00 | 0.15µm E-mode 4V Operation pHEMT | 2024 | F/B | Y | Y | By Request | By Request | Y | N |
| PE15-0P | 0.15µm E-mode 4V Operation pHEMT | 2024 | F/B | Y | Y | By Request | By Request | Y | N |
| PP10-1X | 0.1µm 4V Operation pHEMT | 2021 | F/B | Y | Y | By Request | By Request | Y | N |
| PP10-20 | 0.1µm 4V Operation D-mode pHEMT | 2024 | F/B | Y | Y | By Request | By Request | Y | N |
| IP2M-10 | 8V Operation IPD | 2021 | F/B | Y | Y | By Request | By Request | Y |
N |
| IP3M-00 | 28V Operation IPD | 2021 | F/B | Y | Y | By Request | By Request | Y | N |
| IP3M-01 | 50V Operation IPD | 2021 | F/B | Y | Y | By Request | By Request | Y | N |
| PIN3-00 | 3µm i-layer Diode | 2022 | F/B | Y | Y | By Request | By Request | Y | N |
| PQH1-0P | Advanced Ka-Band E-mode pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | N |
| PQH1-12 | 8V Operation Air-Bridge D-mode pHEMT | 2023 | F/B | Y | Y | By Request | By Request | Y | N |
| PQG3-0C | 4V Ka Band ED mode pHEMT | 2024 | F/B | Y | Y | By Request | By Request | Y | N |
| HVD1-00 | Hyperabrupt Varactor Diode | 2024 | F/B | Y | Y | By Request | By Request | Y | N |
Note: WIN Semiconductors supports ADS 2019 and above.
News
- WIN Semiconductors Becomes First GaAs Foundry to Unveil Support for Electro-Thermal Analysis in ADS
- WIN Semiconductors and Keysight Technologies Significantly Expand Design Kit Offering using Keysight’s most recent Advanced Design System 2011 Software
- WIN Semiconductors Announces updated ADS Desktop DRC support in its PDKs for ADS
- WIN Semiconductors Announces New MMIC Tool Bar Personality for ADS Process Design Kits
- WIN Semiconductors Releases 0.25µm Design Kits for use with ADS
Contact your foundry partner directly for downloading the latest ADS PDKs. WIN Semiconductors
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